- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384494 > IRFD9220 (HARRIS SEMICONDUCTOR) 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | IRFD9220 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET |
| 中文描述： | 600 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 53K |
| 代理商： | IRFD9220 |
4-51
File Number
2286.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFD9220
0.6A, 200V 1.500 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17502.
Features
0.6A, 200V
r
DS(ON)
= 1.500
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Symbol
Packaging
HEXDIP
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD9220
HEXDIP
IRFD9220
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
GATE
DRAIN
Data Sheet
July 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFD9220 | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A) |
| IRFE120 | HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
| irfe430 | HEXFET TRANSISTOR |
| IRFE430 | HEXFET Transistor(HEXFET 晶體管) |
| IRFF110 | 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET(3.5A, 100V, 0.600 Ohm，N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFD9220PBF | 功能描述:MOSFET P-Chan 200V 0.56 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD9223 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 450MA I(D) | TO-250VAR |
| IRFDC20 | 功能描述:MOSFET N-Chan 600V 0.32 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFDC20PBF | 功能描述:MOSFET N-Chan 600V 0.32 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFE024 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。