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參數資料
| 型號： | IRFEA240 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 11A I(D) | LLCC |
| 中文描述： | 晶體管| MOSFET的|陣| N溝道| 200伏五（巴西）直| 11A條（丁）| LLCC |
| 文件頁數： | 1/7頁 |
| 文件大小： | 243K |
| 代理商： | IRFEA240 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
11
7.0
44
50
0.4
±20
80
11
5.0
5.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5 s)
0.89
g
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
o
C
A
HEXFET
POWER MOSFET
SURFACE MOUNT (LCC-28)
IRFEA240
10/20/00
www.irf.com
1
200V, N-CHANNEL
LCC-28
Product Summary
Part Number
BVDSS
R
DS(on)
I
D
IRFEA240 200V 0.18
11A
Features:
n
Low R
DS(on)
n
Avalanche Energy Ratings
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Light Weight
For footnotes refer to the last page
PD - 93978
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