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參數資料
| 型號： | IRFF9130 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |
| 中文描述： | 功率MOSFET P溝道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.30ohm，身份證\u003d- 6.5A） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 327K |
| 代理商： | IRFF9130 |
4-101
File Number
2216.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFF9130
-6.5A, -100V, 0.300 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17511.
Features
-6.5A, -100V
r
DS(ON)
= 0.300
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF9130
TO-205AF
IRFF9130
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
(CASE)
GATE
Data Sheet
February 1999
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| IRFF9230 | -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFF9130 | 制造商:International Rectifier 功能描述:MOSFET P CH 100V 6.5A TO-39 |
| IRFF9130 | 制造商:International Rectifier 功能描述:TRANSISTOR |
| IRFF9130/043383-108/BFG | 制造商:International Rectifier 功能描述:HEXFET, HI-REL - Bulk |
| IRFF9130_11 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P-CHANNEL POWER MOSFET |
| IRFF9131 | 制造商:Harris Corporation 功能描述: |
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