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參數資料
| 型號： | IRFI1010N |
| 廠商： | International Rectifier |
| 英文描述： | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應管) |
| 中文描述： | N溝道HEXFET功率MOSFET的（不適用溝道的HEXFET功率馬鞍山場效應管） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 109K |
| 代理商： | IRFI1010N |
IRFI1010N
HEXFET
Power MOSFET
PD - 9.1373A
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.012
I
D
= 49A
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
TO-220 FULLPAK
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
8/25/97
Description
Parameter
Max.
49
35
290
58
0.38
± 20
360
43
5.8
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Parameter
Typ.
–––
–––
Max.
2.6
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Thermal Resistance
°C/W
相關PDF資料 |
PDF描述 |
|---|---|
| IRFI1010 | Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A) |
| IRFI1310G | Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A) |
| IRFI1310N | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應管) |
| IRFI3205 | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應管) |
| IRFI360 | TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFI1010NPBF | 功能描述:MOSFET MOSFT 55V 44A 12mOhm 86.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFI1310G | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A) |
| IRFI1310N | 功能描述:MOSFET N-CH 100V 24A TO220FP RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFI1310NPBF | 功能描述:MOSFET MOSFT 100V 22A 36mOhm 80nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFI1404 | 制造商:International Rectifier 功能描述:Electronic Component |
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