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參數資料
| 型號： | IRFL4315 |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的開關電源 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 122K |
| 代理商： | IRFL4315 |
www.irf.com
1
06/14/02
IRFL4315
SMPS MOSFET
HEXFET
Power MOSFET
High frequency DC-DC converters
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
Parameter
Max.
2.6
2.1
21
2.8
0.02
± 30
6.3
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through
are on page 8
PD - 94445
V
DSS
150V
R
DS(on)
max
185
m
@V
GS
= 10V
I
D
2.6A
Symbol
R
θ
JA
Parameter
Typ.
–––
Max.
45
Units
°C/W
Junction-to-Ambient (PCB Mount, steady state)
Thermal Resistance
SOT-223
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFL4315HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 |
| IRFL4315PBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 185mOhms 12nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFL4315TRPBF | 功能描述:MOSFET MOSFT 150V 2.6A 185mOhm 12nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFL5505 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 55V V(BR)DSS | 3.4A I(D) | SOT-223 |
| IRFL640 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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