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參數資料
| 型號： | IRFM150 |
| 英文描述： | N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N溝道功率MOS場效應管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) |
| 中文描述： | N溝道功率MOSFET（減振鋼板基本：100V的，身份證（續）：34A條的Rds（on）：0.070Ω）（不適用馬鞍山溝道功率場效應管（減振鋼板基本：100V的，身份證（續）：34A條的Rds（on） ：0.070Ω）） |
| 文件頁數： | 2/2頁 |
| 文件大小： | 23K |
| 代理商： | IRFM150 |
2N7224
IRFM150
LA B
S E M E
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
2/99
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 21A
I
D
= 34A
I
D
= 250
m
A
I
DS
= 21A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DS
I
D
=34A
V
DS
= 0.5BV
DS
I
D
= 34A
V
DD
= 50V
I
D
= 34A
R
G
= 2.35
W
I
S
= 34A
V
GS
= 0
I
F
= 34A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
PACKAGE CHARACTERISTICS
100
0.13
0.070
0.081
4
2
9
25
250
100
–100
3700
1100
200
50
125
8
22
65
35
190
170
130
15
34
136
1.8
500
2.9
Negligible
8.7
8.7
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Pulse Test: Pulse Width
￡
300
m
s,
d ￡
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
相關PDF資料 |
PDF描述 |
|---|---|
| IRFM150 | N-CHANNEL POWER MOSFET |
| IRFM210A | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 770MA I(D) | SOT-223 |
| IRFM214A | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 640MA I(D) | SOT-223 |
| IRFM220A | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1.1A I(D) | SOT-223 |
| IRFM224A | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 920MA I(D) | SOT-223 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFM150D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 34A I(D) | TO-254VAR |
| IRFM150U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 34A I(D) | TO-254VAR |
| IRFM210 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| IRFM210A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET (200V, 1.5ohm, 0.77A) |
| IRFM210B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
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