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參數(shù)資料
| 型號(hào)： | IRFM250 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET THRU-HOLE (TO-254AA) |
| 中文描述： | 功率MOSFET的通孔（對(duì)254AA） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 15K |
| 代理商： | IRFM250 |
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
IRFM250
V
GS
I
D
Gate – Source Voltage
Continuous Drain Current
@ V
GS
= 10V , T
C
= 25°C
@ V
GS
= 10V , T
C
= 100°C
I
DM
P
D
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Avalanche Current , Clamped
1
Peak Diode Recovery
2
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
Operating Junction and Storage Temperature Range
Lead Temperature (1.6mm from case for 10s)
@ T
C
= 25°C
I
L
dv / dt
R
θ
JC
R
θ
JA
R
θ
CS
T
J
, T
STG
T
L
±20V
27.4A
17A
110A
150W
1.2W / °C
27.4A
5.5V / ns
0.83°C / W
48°C / W
0.21°C / W typ.
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
1
2
3
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
3
3
1
1
1
1
2
2
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
TO–254AA – Isolated Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise stated)
1)
2)
V
DD
= 50V , Starting T
J
= 25°C , L
≥
1mH , R
G
= 25
, Peak I
L
= 27.4A
I
SD
≤
27.4A , di/dt
≤
190A /
μ
S , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 2.35
N–CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
FEATURES
N–CHANNEL MOSFET
HIGH VOLTAGE
INTEGRAL PROTECTION DIODE
HERMETIC ISOLATED TO-254 PACKAGE
CERAMIC SURFACE MOUNT PACKAGE
OPTION
200V
27.4A
0.100
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRFM250_06 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL POWER MOSFET |
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| IRFM260SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 35A 3PIN TO-254AA - Bulk |
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