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參數資料
| 型號： | IRFM360 |
| 廠商： | International Rectifier |
| 英文描述： | 400V, N-CHANNEL HEXFET MOSFETTECHNOLOGY |
| 中文描述： | 為400V，N溝道的HEXFET MOSFETTECHNOLOGY |
| 文件頁數： | 1/7頁 |
| 文件大小： | 514K |
| 代理商： | IRFM360 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
23
14
92
250
2.0
±20
980
23
25
4.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
g
PD - 90712B
HEXFET
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
o
C
A
POWER MOSFET
THRU-HOLE (TO-254AA)
2/11/02
www.irf.com
1
TO-254AA
Product Summary
Part Number R
DS(on)
I
D
IRFM360 0.20
23A
Features:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
For footnotes refer to the last page
IRFM360
400V, N-CHANNEL
MOSFET TECHNOLOGY
HEXFET
相關PDF資料 |
PDF描述 |
|---|---|
| IRFM450 | HEXFET Transistor(HEXFET 晶體管) |
| IRFM9140 | POWER MOSFET THRU-HOLE (TO-254AA) |
| IRFMA450 | POWER MOSFET THRU-HOLE (Tabless TO-254AA) |
| IRFP044N | Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A) |
| IRFP044 | Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFM360B | 制造商:International Rectifier 功能描述: |
| IRFM360D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 23A I(D) | TO-254VAR |
| IRFM360SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 23A 3PIN TO-254AA - Bulk |
| IRFM360SCX | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 23A 3PIN TO-254AA - Bulk |
| IRFM360U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 23A I(D) | TO-254VAR |
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