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參數資料
| 型號： | IRFMG50U |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5.6A I(D) | TO-254VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 1KV交五（巴西）直| 5.6AI（四）|對254VAR |
| 文件頁數： | 1/7頁 |
| 文件大小： | 475K |
| 代理商： | IRFMG50U |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
3.9
2.5
16
125
1.0
±20
530
3.9
12.5
1.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300(0.063in./1.6mm from case for 10 sec)
9.3 (Typical)
g
PD - 90710B
HEXFET
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
o
C
A
POWER MOSFET
THRU-HOLE (TO-254AA)
2/11/02
www.irf.com
1
1000V, N-CHANNEL
MOSFET TECHNOLOGY
HEXFET
TO-254AA
Product Summary
Part Number R
DS(on)
I
D
IRFMG40
3.5
3.9A
Features:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
For footnotes refer to the last page
IRFMG40
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