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參數(shù)資料
| 型號(hào)： | IRFN044SMD |
| 英文描述： | N-Channel Power MOSFET(Vdss:60V,Id(cont):34A,Rds(on):0.040Ω)(N溝道功率MOS場(chǎng)效應(yīng)管(Vdss:60V,Id(cont):34A,Rds(on):0.040Ω)) |
| 中文描述： | N溝道功率MOSFET（減振鋼板基本：60V的，身份證（續(xù)）：34A條的Rds（on）：0.040Ω）（不適用馬鞍山溝道功率場(chǎng)效應(yīng)管（減振鋼板基本：60V的，身份證（續(xù)）：34A條的Rds（on） ：0.040Ω）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 22K |
| 代理商： | IRFN044SMD |
IRFN044SMD
Prelim. 7/00
LA B
S E M E
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 21A
I
D
= 34A
I
D
= 250
m
A
I
DS
= 21A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 34A
V
DS
= 0.5BV
DSS
I
D
= 34A
V
DD
= 30V
I
D
= 34A
R
G
= 9.1
W
I
S
= 34A
V
GS
= 0
I
F
= 34A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
60
0.68
0.040
0.050
4
2
17
25
250
100
–100
2400
1100
230
39
88
6.7
18
15
52
23
130
81
79
34
136
2.5
220
1.6
Negligible
0.8
2.8
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFN044 | POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A) |
| IRFN044SMD | N-CHANNEL POWER MOSFET |
| IRFN054SMD | N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N溝道功率MOS場(chǎng)效應(yīng)管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) |
| IRFN054 | POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*) |
| IRFN054SMD | N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFN054 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 55A 3-Pin SMD-1 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 55A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:Single N-Channel 60 V 150 W 160 nC Hexfet Power Mosfet Surface Mount - SMD-1 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 60V, 55A, SMD-1; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| IRFN054SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 55A 3SMD-1 - Bulk |
| IRFN054SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 55A 3SMD-1 - Bulk |
| IRFN054SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| IRFN130SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
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