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參數(shù)資料
| 型號(hào)： | IRFN150 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A) |
| 中文描述： | 功率MOSFET N溝道（BVdss \u003d 100V的，的Rds（on）\u003d 0.060ohm，身份證\u003d 34A條） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 22K |
| 代理商： | IRFN150 |
IRFN150SMD
Prelim.7/00
LA B
MECHANICAL DATA
Dimensions in mm (inches)
S E M E
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukV
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
E
AS
dv/dt
T
J
, T
stg
T
L
R
q
JC
R
q
J–PCB
±20V
27A
19A
108A
100W
0.8W/°C
150mJ
5.5V/ns
–55 to 150°C
300°C
1.25°C/W
3°C/W
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
SMD1
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) @ V
DD
= 25V , L
3
0.3mH , R
G
= 25
W
, Peak I
L
= 27A , Starting T
J
= 25°C
3) @ I
SD
￡
27A , di/dt
￡
70A/
m
s , V
DD
￡
BV
DSS
, T
J
￡
150°C , SUGGESTED R
G
= 2.35
W
N–CHANNEL
POWER MOSFET
FEATURES
HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
HIGH PACKING DENSITIES
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
Note:
IRFxxxSM also available with
pins 1 and 3 reversed.
V
DSS
I
D(cont)
R
DS(on)
100V
19A
0.070
W
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|---|---|
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