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參數資料
型號: IRFP27N60K
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 600V電壓的Rds(on)典型.\u003d 180mohm,身份證\u003d 27A條)
文件頁數: 1/8頁
文件大小: 91K
代理商: IRFP27N60K
IRFP27N60K
03/20/02
www.irf.com
1
PD - 94407
SMPS MOSFET
HEXFET
Power MOSFET
Parameter
Max.
27
18
110
500
4.0
± 30
13
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°C
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–––
–––
–––
Max.
530
27
50
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
Hard Switching Primary or PFC Switch
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Motor Drive
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Enhanced Body Diode dv/dt Capability
Applications
TO-247AC
V
DSS
600V
R
DS(on)
typ.
180m
I
D
27A
相關PDF資料
PDF描述
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IRFP350LC Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)
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