- 您現在的位置：買賣IC網 > PDF目錄360944 > IRFP460AS (International Rectifier) Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) PDF資料下載
參數資料
| 型號： | IRFP460AS |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）最大值\u003d 0.27ohm，身份證\u003d 20A條） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 94K |
| 代理商： | IRFP460AS |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
IRFP460
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
V
DSS
= 500 V
I
D
= 20 A
R
DS(ON)
≤
0.27
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
tab
drain
The IRFP460 is supplied in the
SOT429
(TO247)
leaded package.
conventional
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
±
30
20
12.4
80
250
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 20 A;
t
p
= 0.2 ms; T
j
prior to avalanche = 25C;
V
DD
≤
50 V; R
= 50
; V
= 10 V
MIN.
-
MAX.
1300
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 20 A; t
= 2.5
μ
s; T
prior to
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V
Repetitive and non-repetitive
avalanche current
-
32
mJ
I
AS
, I
AR
-
20
A
d
g
s
2
3
1
1
pulse width and repetition rate limited by T
j
max.
September 1999
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| IRFP460LC | CABLE ASSEMBLY; MMCX PLUG TO SMA MALE; 50 OHM, RG188A/U COAX; 48" CABLE LENGTH |
| IRFP460 | Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A) |
| IRFPC60LC-P | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16A I(D) | TO-247AC |
| IRFPC42 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.9A I(D) | TO-247AC |
| IRFPE32 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.4A I(D) | TO-247AC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFP460B | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:D Series Power MOSFET |
| IRFP460BPBF | 功能描述:MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460C | 功能描述:MOSFET 500V N-Channel C-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460LC | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460LCPBF | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。