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參數資料
| 型號： | IRFP4710 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）最大值\u003d 0.014ohm，身份證\u003d 72A條） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 103K |
| 代理商： | IRFP4710 |
Notes
www.irf.com
through
are on page 8
1
01/08/02
IRFP4710
HEXFET
Power MOSFET
V
DSS
100V
R
DS(on)
max
0.014
I
D
72A
PD - 94361
Parameter
Max.
72
51
300
190
1.2
± 20
8.2
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw 10 lbf
in (1.1N
m)
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°
C
Absolute Maximum Ratings
High frequency DC-DC converters
Motor Control
Uninterruptible Power Supplies
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
Thermal Resistance
Parameter
Typ.
–––
0.24
–––
Max.
0.81
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
TO-247AC
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFP4710PBF | 功能描述:MOSFET MOSFT 100V 72A 14mOhm 110nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP4710PBF-EL | 制造商:International Rectifier 功能描述: |
| IRFP4768PBF | 功能描述:MOSFET MOSFT 250V 83A 21mOhm 195nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP4868PBF | 功能描述:MOSFET 300V, 70A, 32 mOhm 180 nC Qg, TO-247AC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP7430PBF | 功能描述:MOSFET 40V 195A 1.4mOhm HEXFET 366W 300nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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