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參數資料
| 型號： | IRFP90N20D |
| 廠商： | International Rectifier |
| 英文描述： | CAP,TANT,100UF,10V,LOW ESR,D PKG |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）最大值\u003d 0.023ohm，身份證\u003d 94A章） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 89K |
| 代理商： | IRFP90N20D |
Notes
www.irf.com
through
are on page 8
1
09/27/01
IRFP90N20D
HEXFET
Power MOSFET
SMPS MOSFET
V
DSS
200V
R
DS(on)
max
0.023
I
D
94A
Parameter
Max.
94
66
380
580
3.8
± 30
6.7
-55 to + 175
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
300 (1.6mm from case )
°
C
10 lbf
in (1.1N
m)
Absolute Maximum Ratings
High frequency DC-DC converters
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
TO-247AC
PD - 94301A
Thermal Resistance
Parameter
Typ.
–––
0.24
–––
Max.
0.26
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFP90N20DHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC |
| IRFP90N20DPBF | 功能描述:MOSFET MOSFT 200V 94A 23mOhm 180nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP9130 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
| IRFP9131 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
| IRFP9132 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
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