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參數資料
| 型號： | IRFPC60LC-P |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16A I(D) | TO-247AC |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 16A條（丁）|對247AC |
| 文件頁數： | 2/8頁 |
| 文件大小： | 107K |
| 代理商： | IRFPC60LC-P |
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IRFPC60LC-P
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 16A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 16A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
650
6.0
1.8
980
9.0
V
ns
μC
V
DD
= 25V, starting T
J
= 25
°
C, L = 7.2mH
R
G
= 25
, I
AS
= 16A. (See Figure 12)
I
SD
≤
16A, di/dt
≤
140A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
600
–––
–––
0.63
–––
–––
2.0
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
–––
57
–––
43
–––
38
Conditions
V
GS
= 0V, ID = 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 9.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 9.6A
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 20V
V
GS
= -20V
I
D
= 16A
V
DS
= 360V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 300V
I
D
= 16A
R
G
= 4.3
R
D
= 18
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.40
4.0
–––
25
250
100
-100
120
29
48
–––
–––
–––
–––
V
V/
°
C
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
3500
–––
–––
400
–––
39
–––
–––
pF
–––
–––
64
–––
–––
16
A
nH
L
D
Internal Drain Inductance
–––
5.0
–––
L
S
Internal Source Inductance
–––
13
–––
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
μA
nA
S
D
G
S
D
G
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFPC60LCPBF | 功能描述:MOSFET N-Chan 600V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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