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參數(shù)資料
| 型號： | IRFPS40N50L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）典型.\u003d 0.087ohm，身份證\u003d 46A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 111K |
| 代理商： | IRFPS40N50L |
IRFPS40N50L
05/09/01
www.irf.com
1
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
500V
R
DS(on)
typ.
0.087
I
D
46A
Parameter
Max.
46
29
180
540
4.3
± 30
25
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dv/dtPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
A
W
W/
°
C
V
V/ns
V
GS
T
J
T
STG
-55 to + 150
300
°
C
Absolute Maximum Ratings
SUPER TO-247AC
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamicdv/dt
Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Low Trr and Soft Diode Recovery
High Performance Optimised Anti-parallel Diode
Applications
Switch Mode Power Supply (SMPS)
UninterruptIble Power Supply
High Speed Power Switching
ZVS and High Frequency Circuit
PWM Inverters
Typical SMPS Topologies
Bridge Converters
All Zero Voltage Switching
S
D
G
Diode Characteristics
Symbol
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
A
Parameter
Min. Typ. Max. Units
–––
–––
Conditions
46
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 46A, V
GS
= 0V
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
170
220
705 1060
1.3
9.0
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.5
250
330
V
I
F
= 46A
di/dt = 100A/μs
nC
μ
C
A
2.0
–––
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
ns
PD- 93923B
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| IRFPS43N50K | 功能描述:MOSFET N-Chan 500V 47 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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