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參數(shù)資料
| 型號(hào)： | IRFPS43N50 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）典型.\u003d 0.078ohm，身份證\u003d 47A條） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 99K |
| 代理商： | IRFPS43N50 |
IRFPS43N50K
04/03/01
www.irf.com
1
SMPS MOSFET
HEXFET
Power MOSFET
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Circuits
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Low R
DS(on)
Applications
V
DSS
500V
R
DS(on)
typ.
0.078
I
D
47A
Parameter
Max.
47
29
190
540
4.3
± 30
9.0
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dv/dtPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
A
W
W/
°
C
V
V/ns
V
GS
T
J
T
STG
-55 to + 150
300
°
C
Absolute Maximum Ratings
Super
-
247
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–––
–––
–––
Max.
910
47
54
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ.
–––
0.24
–––
Max.
0.23
–––
40
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
PD- 93922B
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