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參數資料
| 型號： | IRFR214 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 250V，的Rds（on）\u003d 2.0ohm，身份證\u003d 2.2a在） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 52K |
| 代理商： | IRFR214 |
4-383
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFR214, IRFU214
2.2A, 250V 2.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. They are
advanced power MOSFETs are designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for high-
power bipolar switching transistors requiring high speed and
low gate-drive power. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA17443.
Features
2.2A, 250V
r
DS(ON)
= 2.000
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
High Input Impedance
150
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR214
TO-252AA
IRFR214
IRFU214
TO-251AA
IRFU214
NOTE:
When ordering, use the entire part number.
G
D
S
GATE
SOURCE
DRAIN
DRAIN (FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3274.2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR21496 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR214A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA |
| IRFR214B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| IRFR214BTF | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFR214BTF_FP001 | 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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