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參數(shù)資料
| 型號(hào)： | IRFR320A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 3.1AI（四）|對(duì)252AA |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | IRFR320A |
2002 Fairchild Semiconductor Corporation
IRFR320, IRFU320 Rev. B
IRFR320, IRFU320
3.1A, 400V, 1.800 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17404.
Features
3.1A, 400V
r
DS(ON)
= 1.800
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR320
TO-252AA
IFR320
IRFU320
TO-251AA
IFU320
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e., IRFR3209A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
Data Sheet
January 2002
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFR322 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.6A I(D) | TO-252AA |
| IRFR3303TR | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 33A I(D) | TO-252AA |
| IRFR3303TRL | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 33A I(D) | TO-252AA |
| IRFR3303TRR | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 33A I(D) | TO-252AA |
| IRFU320A | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-251AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR320B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET |
| IRFR320BTF | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR320BTM | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR320PBF | 功能描述:MOSFET N-Chan 400V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR320TF | 制造商:Samsung Semiconductor 功能描述: |
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