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參數資料
| 型號： | IRFR3709Z |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/11頁 |
| 文件大小： | 217K |
| 代理商： | IRFR3709Z |
www.irf.com
1
06/23/03
IRFR3709Z
IRFU3709Z
HEXFET Power MOSFET
V
DSS
R
DS(on)
max
30V
6.5m
Notes
through are on page 11
Applications
High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
Very Low R
DS(on)
at 4.5V V
GS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
Qg
17nC
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
A
Maximum Power Dissipation
Maximum Power Dissipation
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/°C
°C
T
J
T
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
79
39
0.53
Max.
30
86
61
340
± 20
300 (1.6mm from case)
-55 to + 175
I-Pak
IRFU3709Z
D-Pak
IRFR3709Z
相關PDF資料 |
PDF描述 |
|---|---|
| IRFU3709Z | HEXFET Power MOSFET |
| IRFR3710ZPBF | AUTOMOTIVE MOSFET |
| IRFU3710ZPbF | AUTOMOTIVE MOSFET |
| IRFR3711ZCPBF | HEXFET Power MOSFET |
| IRFU3711ZCPBF | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR3709ZCPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3709ZCTRPBF | 功能描述:MOSFET MOSFET, 30V, 86A, 6.5 mOhm, 17 nC Qg, D-Pak RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3709ZCTRRP | 功能描述:MOSFET MOSFET, 30V, 86A, 6.5 mOhm, 17 nC Qg, D-Pak RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3709ZHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 86A 3-Pin(2+Tab) DPAK |
| IRFR3709ZPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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