- 您現在的位置：買賣IC網 > PDF目錄360946 > IRFR430ATRL TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-252AA PDF資料下載
參數資料
| 型號： | IRFR430ATRL |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 5A條（丁）|對252AA |
| 文件頁數： | 1/10頁 |
| 文件大小： | 111K |
| 代理商： | IRFR430ATRL |
www.irf.com
1
12/11/01
IRFR430A
IRFU430A
HEXFET
Power MOSFET
SMPS MOSFET
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High speed power switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Effective C
OSS
specified (See AN 1001)
Applications
V
DSS
500V
R
DS
(on) max
1.7
I
D
5.0A
Absolute Maximum Ratings
PD - 94356
Parameter
Typ.
–––
–––
–––
Max.
130
5.0
11
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Parameter
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
D-Pak
IRFR430A
I-Pak
IRFU430A
Parameter
Max.
5.0
3.2
20
110
0.91
± 30
3.0
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
相關PDF資料 |
PDF描述 |
|---|---|
| IRFR430ATRR | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-252AA |
| IRFR4209A | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | TO-252AA |
| IRFR430 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3.5A I(D) | TO-252AA |
| IRFR430A | 500V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
| IRFR430ATR | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-252AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR430ATRLPBF | 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR430ATRPBF | 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR430ATRR | 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR430ATRRPBF | 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR430B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
發布緊急采購，3分鐘左右您將得到回復。