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參數資料
| 型號： | IRFR9210PBF |
| 廠商： | International Rectifier |
| 英文描述： | M16C; M16C/60 Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 128K; RAM: 10K; ROM Type: Mask ROM; CPU: M16C/60 core; Minimum Instruction Execution Time (ns): 41.7 (@24MHz); Operating Frequency / Supply Voltage: 24MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -20 to 85, -40 to 85; Package Code: PRQP0100JB-A (100P6S-A) |
| 中文描述： | HEXFET功率MOSFET（減振鋼板基本\u003d - 200V的電壓，的RDS（on）\u003d 3.0ヘ，身份證\u003d - 1.9A） |
| 文件頁數： | 1/10頁 |
| 文件大小： | 1796K |
| 代理商： | IRFR9210PBF |
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相關PDF資料 |
PDF描述 |
|---|---|
| IRFU9210PBF | M16C; M16C/60 Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 128K; RAM: 10K; ROM Type: Mask ROM; CPU: M16C/60 core; Minimum Instruction Execution Time (ns): 41.7 (@24MHz); Operating Frequency / Supply Voltage: 24MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -20 to 85, -40 to 85; Package Code: PLQP0100KB-A (100P6Q-A) |
| IRFR9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A) |
| IRFU9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A) |
| IRFR9214PBF | HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0ヘ , ID = -2.7A ) |
| IRFU9214PBF | HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0ヘ , ID = -2.7A ) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR9210TF | 制造商:Samsung Semiconductor 功能描述:IRFR9210TF |
| IRFR9210TR | 功能描述:MOSFET P-Chan 200V 1.9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR9210TRA | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
| IRFR9210TRL | 功能描述:MOSFET P-Chan 200V 1.9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR9210TRLA | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
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