欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): IRFRU4105
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 55V的,的Rds(on)\u003d 0.045ohm,身份證\u003d 27A條)
文件頁(yè)數(shù): 1/10頁(yè)
文件大小: 144K
代理商: IRFRU4105
IRFR/U4105
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.045
I
D
= 27A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
5/11/98
Parameter
Max.
27
19
100
68
0.45
± 20
65
16
6.8
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
°C/W
Thermal Resistance
D-PAK
TO-252AA
I-PAK
TO-251AA
l
Ultra Low On-Resistance
l
Surface Mount (IRFR4105)
l
Straight Lead (IRFU4105)
l
Fast Switching
l
Fully Avalanche Rated
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91302C
1
相關(guān)PDF資料
PDF描述
IRFR4105 55V,27A,N-Channel HEXFET Power MOSFET(55V,27A,N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
IRFU4105 55V,27A,N-Channel HEXFET Power MOSFET(55V,27A,N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
IRFS17N20DPBF HEXFET Power MOSFET
IRFSL17N20DPBF HEXFET Power MOSFET
IRFS23N15DPBF HEXFET㈢Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFRU5305 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A)
IRFRU5410 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A)
IRFRU5505 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)
IRFRU6215 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)
IRFRU9024N 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)
主站蜘蛛池模板: 阳高县| 墨竹工卡县| 绍兴县| 阿城市| 景东| 乐平市| 平南县| 壤塘县| 奉节县| 托克逊县| 永川市| 鸡东县| 荆门市| 河津市| 宁都县| 博爱县| 永泰县| 宁津县| 通化市| 樟树市| 彭阳县| 石城县| 色达县| 芜湖市| 荃湾区| 孟津县| 普洱| 虞城县| 华容县| 沾益县| 武乡县| 杭州市| 泌阳县| 长汀县| 长岛县| 高平市| 宜君县| 鄱阳县| 秦皇岛市| 丰镇市| 靖西县|