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參數資料
| 型號： | IRFS3206PBF |
| 廠商： | International Rectifier |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 441K |
| 代理商： | IRFS3206PBF |
6/5/06
www.irf.com
1
HEXFET Power MOSFET
S
D
G
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
D
2
Pak
IRFS3206PbF
TO-220AB
IRFB3206PbF
TO-262
IRFSL3206PbF
S
D
G
S
D
G
S
D
G
D
D
D
IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
G
D
S
Gate
Drain
Source
V
DSS
R
DS(on)
typ.
max.
I
D
60V
2.4m
3.0m
210A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Parameter
Units
A
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
V
GS
dv/dt
T
J
T
STG
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
mJ
A
mJ
Thermal Resistance
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
2
Pak
°C/W
300
Max.
210
150
840
300
2.0
200
See Fig. 14, 15, 22a, 22b,
5.0
-55 to + 175
± 20
10lb in (1.1N m)
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