- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377512 > IRFS3207ZPbF (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRFS3207ZPbF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 840K |
| 代理商： | IRFS3207ZPBF |
05/29/06
Benefits
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability
www.irf.com
1
IRFB3207ZPbF
IRFS3207ZPbF
IRFSL3207ZPbF
Applications
High Efficiency Synchronous Rectification in
SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
HEXFET Power MOSFET
G
D
S
Gate
Drain
Source
TO-220AB
IRFB3207ZPbF
D
S
D
G
D
D
S
G
D
2
Pak
IRFS3207ZPbF
TO-262
IRFSL3207ZPbF
S
D
G
V
DSS
R
DS(on)
typ.
max
I
D
75V
3.3m
4.1m
170A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Parameter
Units
A
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J
T
STG
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Thermal Resistance
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
mJ
A
mJ
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
2
Pak
°C/W
180
75
30
300
2.0
16
-55 to + 175
± 20
10lb in (1.1N m)
300
Max.
170
120
670
S
D
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFSL3207ZPbF | HEXFET Power MOSFET |
| IRFS3306PBF | High Efficiency Synchronous Rectification in SMPS |
| IRFSL3306PBF | High Efficiency Synchronous Rectification in SMPS |
| IRFS3507PBF | HEXFET㈢Power MOSFET |
| IRFSL3507PBF | HEXFET㈢Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS3207ZPBF/010493-1/GE | 制造商:International Rectifier 功能描述:MOSFET, TO GE AVIATION DWG 010493-1 - Rail/Tube |
| IRFS3207ZTRRPBF | 功能描述:MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS3306 | 制造商:International Rectifier 功能描述: |
| IRFS3306PBF | 功能描述:MOSFET 60V 1 N-CH HEXFET 4.2mOhms 85nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS3306TRLPBF | 功能描述:MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。