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參數(shù)資料
| 型號： | IRFS4310PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 385K |
| 代理商： | IRFS4310PBF |
01/31/06
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
www.irf.com
1
D
2
Pak
IRFS4310PbF
TO-220AB
IRFB4310PbF
TO-262
IRFSL4310PbF
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
HEXFET Power MOSFET
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
S
D
G
S
D
G
S
D
G
S
D
G
V
DSS
R
DS(on)
typ.
max.
I
D
100V
5.6m
7.0m
130A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Parameter
Units
A
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
V
GS
dV/dt
T
J
T
STG
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
mJ
A
mJ
Thermal Resistance
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
2
Pak
°C/W
300
Max.
130
92
550
300
2.0
980
See Fig. 14, 15, 22a, 22b,
14
-55 to + 175
± 20
10lb in (1.1N m)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS4310TRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 140A 3PIN D2PAK - Tape and Reel |
| IRFS4310TRLPBF | 功能描述:MOSFET MOSFT 100V 140A 7mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS4310TRRPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 7mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS4310ZPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 6mOhms 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS4310ZTRLPBF | 功能描述:MOSFET MOSFT 100V 127A 6mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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