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參數資料
| 型號： | IRFU2307ZPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數： | 1/12頁 |
| 文件大小： | 374K |
| 代理商： | IRFU2307ZPBF |
www.irf.com
1
HEXFET
Power MOSFET
V
DSS
= 75V
R
DS(on)
= 16m
I
D
= 42A
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
Absolute Maximum Ratings
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
D-Pak
IRFR2307Z
I-Pak
IRFU2307Z
AUTOMOTIVE MOSFET
PD - 95953
IRFR2307ZPbF
IRFU2307ZPbF
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
Pulsed Drain Current
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
–––
–––
–––
Max.
1.42
40
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
110
0.70
± 20
Max.
53
38
42
210
140
100
See Fig.12a, 12b, 15, 16
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相關代理商/技術參數 |
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