欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRFW614A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.8A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 250V五(巴西)直| 2.8AI(四)|對263AB
文件頁數: 1/7頁
文件大小: 224K
代理商: IRFW614A
IRFW/I634A
BV
DSS
= 250 V
R
DS(on)
= 0.45
I
D
= 8.1 A
250
8.1
5.1
32
±
30
205
8.1
7.4
4.8
3.1
74
0.59
- 55 to +150
300
1.69
40
62.5
--
--
--
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 250V
Lower R
DS(ON)
: 0.327
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
A
=25
°
C)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
°
C
A
°
C
*
1999 Fairchild Semiconductor Corporation
Rev. B
相關PDF資料
PDF描述
IRFW630A TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-263AB
IRFW640A TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-263AB
IRFW644A TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB
IRFI640A TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-262AA
IRFI644A TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-262AA
相關代理商/技術參數
參數描述
IRFW614B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
IRFW614BTM_FP001 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFW620A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-263AB
IRFW620B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
IRFW620BTM 制造商:Rochester Electronics LLC 功能描述:- Bulk
主站蜘蛛池模板: 北辰区| 乐亭县| 钦州市| 朝阳县| 屯昌县| 云安县| 万宁市| 南部县| 双鸭山市| 鄢陵县| 政和县| 武威市| 理塘县| 天柱县| 兴仁县| 潍坊市| 盱眙县| 互助| 金溪县| 嘉义县| 宿州市| 宁国市| 新营市| 四子王旗| 九江市| 花垣县| 敦煌市| 凤山市| 太仆寺旗| 东乡县| 嵊州市| 江津市| 宝兴县| 宽城| 进贤县| 拉萨市| 济南市| 诸暨市| 朝阳县| 平阳县| 寿宁县|