- 您現在的位置：買賣IC網 > PDF目錄377514 > IRFY140CM (International Rectifier) 100 Volt, 0.077Ω,N-Channel HEXFET Power MOSFET(100 V, 0.077Ω,N溝道 HEXFET 功率 MOS場效應管) PDF資料下載
參數資料
| 型號： | IRFY140CM |
| 廠商： | International Rectifier |
| 英文描述： | 100 Volt, 0.077Ω,N-Channel HEXFET Power MOSFET(100 V, 0.077Ω,N溝道 HEXFET 功率 MOS場效應管) |
| 中文描述： | 100伏，0.077Ω，N溝道HEXFET功率MOSFET（100伏，0.077Ω，?溝道的HEXFET功率馬鞍山場效應管） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 146K |
| 代理商： | IRFY140CM |
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRFY140CM
100V
0.077
16*A
Provisional Data Sheet No. PD 9.1287B
HEXFET
POWER MOSFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
IRFY140CM
Features
n
Hermetically Sealed
n
Electrically Isolated
n
Simple Drive Requirements
n
Ease of Paralleling
n
Ceramic Eyelets
N-CHANNEL
100 Volt, 0.077
HEXFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalance Energy
Avalance Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
IRFY140CM
16*
16*
100
100
0.8
±20
230
16*
10
5.5
-55 to 150
Units
ID @ VGS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
A
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
°C
300 (0.063 in (1.6mm) from
case for 10 sec)
4.3 (typical)
Weight
g
*ID current limited by pin diameter
°C
相關PDF資料 |
PDF描述 |
|---|---|
| IRFY340CM | 400 Volt,8.7A, 0.55Ω HEXFET Power MOSFET(400 V,8.7A, 0.55Ω HEXFET 功率 MOS場效應管) |
| IRFY430CM | 500 Volt, 1.5Ω N-Channel HEXFET Power MOSFET(500 V, 1.5Ω N溝道 HEXFET功率 MOS場效應管) |
| IRFY9240CM | -200 Volt, 0.51Ω P-Channel HEXFET Power MOSFET(-200 V, 0.51Ω P溝道HEXFET 功率 MOS場效應管) |
| IRFY9240 | POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A) |
| IRFZ14PBF | HEXFET POWER MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFY140CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk |
| IRFY140CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk |
| IRFY140CSC | 制造商:International Rectifier 功能描述: |
| IRFY140CSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk |
| IRFY140CSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257AA - Bulk |
發布緊急采購，3分鐘左右您將得到回復。