- 您現在的位置：買賣IC網 > PDF目錄384499 > IRFZ44E (International Rectifier) MOV 230V RMS 17MM HIGH ENERGY PDF資料下載
參數資料
| 型號： | IRFZ44E |
| 廠商： | International Rectifier |
| 英文描述： | MOV 230V RMS 17MM HIGH ENERGY |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 0.023ohm，身份證\u003d 48A條） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 96K |
| 代理商： | IRFZ44E |
IRFZ44E
HEXFET
Power MOSFET
PD - 91671B
7/6/99
Parameter
Max.
48
34
192
110
0.71
± 20
220
29
11
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
V
DSS
= 60V
R
DS(on)
= 0.023
I
D
= 48A
S
D
G
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
TO-220AB
相關PDF資料 |
PDF描述 |
|---|---|
| IRFZ44L | HEXFET Power MOSFET |
| IRFZ44S | HEXFET Power MOSFET |
| IRFZ44ZLPBF | HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mヘ , ID = 51A ) |
| IRFZ44ZPBF | HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mヘ , ID = 51A ) |
| IRFZ44ZSPBF | HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mヘ , ID = 51A ) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFZ44E-004HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRFZ44EHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 48A 3PIN TO-220AB - Bulk |
| IRFZ44EL | 功能描述:MOSFET N-CH 60V 48A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFZ44EL-103HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRFZ44ELHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 48A 3PIN TO-262 - Bulk |
發布緊急采購，3分鐘左右您將得到回復。