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參數資料
| 型號： | IRFZ44EL |
| 廠商： | International Rectifier |
| 英文描述： | MOV 250V RMS 17MM HIGH ENERGY |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 0.023ohm，身份證\u003d 48A條） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 64K |
| 代理商： | IRFZ44EL |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
IRFZ44N
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
standard level field-effect power
transistor in a plastic envelope using
’
trench
’ technology.
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in switched mode
power supplies and general purpose
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
49
110
175
22
V
A
W
C
m
The
device
V
GS
= 10 V
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
49
35
160
110
175
UNIT
V
V
V
A
A
A
W
C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
1.4
UNIT
K/W
R
th j-a
in free air
60
-
K/W
d
g
s
1 2 3
tab
February 1999
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| IRFZ44ES | MOV 175V RMS 17MM HIGH ENERGY |
| IRFZ44N | Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) |
| IRFZ44NL | Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) |
| IRFZ44VZS | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) |
| IRFZ44NS | Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFZ44EL-103HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRFZ44ELHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 48A 3PIN TO-262 - Bulk |
| IRFZ44ELPBF | 制造商:International Rectifier 功能描述:MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;TO-262;PD 110W;VGS +/-20V 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 48A 3PIN TO-262 - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 制造商:International Rectifier 功能描述:MOSFET N-Channel 60V 48A TO262 制造商:IR 功能描述:Single N-Channel 60 V 110 W 60 nC Hexfet Power Mosfet Through Hole - TO-262-3 |
| IRFZ44ELPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFZ44EPBF | 功能描述:MOSFET MOSFT 60V 48A 23mOhm 40nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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