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參數資料
| 型號： | IRFZ46NSPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 688K |
| 代理商： | IRFZ46NSPBF |
IRFZ46NSPbF
IRFZ46NLPbF
HEXFET
Power MOSFET
Advanced Process Technology
Surface Mount (IRFZ46NS)
Low-profile through-hole (IRFZ46NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Parameter
Typ.
–––
–––
Max.
1.4
40
Units
R
θ
JC
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
53
37
180
3.8
107
0.71
± 20
28
11
5.0
-55 to + 175
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ46NL) is available for low-
profile applications.
V
DSS
= 55V
R
DS(on)
= 0.0165
I
D
= 53A
D2
TO-262
S
D
G
04/22/04
1
PD - 95158
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFZ46NSTRL | 功能描述:MOSFET N-CH 55V 53A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFZ46NSTRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 53A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 53A 3PIN D2PAK - Tape and Reel |
| IRFZ46NSTRLPBF | 功能描述:MOSFET MOSFT 55V 53A 16.5mOhm 48nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ46NSTRR | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET POWER MOSFET |
| IRFZ46NSTRRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 53A 3-Pin(2+Tab) D2PAK T/R |
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