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參數資料
| 型號： | IRFZ46ZS |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽車MOSFET的 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 289K |
| 代理商： | IRFZ46ZS |
www.irf.com
1
HEXFET
is a registered trademark of International Rectifier.
IRFZ46Z
IRFZ46ZS
IRFZ46ZL
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 13.6m
I
D
= 51A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applica-
tions, this HEXFET
Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
Absolute Maximum Ratings
O
O
O
O
O
O
AUTOMOTIVE MOSFET
PD - 94769
D
2
Pak
IRFZ46ZS
TO-220AB
IRFZ46Z
TO-262
IRFZ46ZL
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
1.84
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
10 lbfin (1.1Nm)
82
0.54
± 20
63
97
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
Max.
51
36
200
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFZ46ZSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 51A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 51A 3PIN D2PAK - Bulk |
| IRFZ46ZSPBF | 功能描述:MOSFET 55V SINGLE N-CH 13.6mOhms 31nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ46ZSTRLPBF | 功能描述:MOSFET MOSFT 55V 51A 13.6mOhm 31nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ48 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB 制造商:Vishay Semiconductors 功能描述:TRANS MOSFET N-CH 60V 50A 3PIN TO-220AB - Bulk 制造商:NULL 功能描述:Vishay Intertechnology IRFZ48 MOSFETs |
| IRFZ48_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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