- 您現在的位置：買賣IC網 > PDF目錄360951 > IRFZ48L TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-262 PDF資料下載
參數資料
| 型號： | IRFZ48L |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-262 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 50A條（丁）|至262 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 358K |
| 代理商： | IRFZ48L |
IRFZ46S/L
V
DD
= 25V
,
starting T
J
= 25°C, L = 34μH
R
G
= 25
, I
AS
= 54A. (See Figure 12)
I
SD
≤
54A, di/dt
≤
250A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRFZ46 data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 54A, V
GS
= 0V
T
J
= 25°C, I
F
= 54A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
66
170
2.5
99
310
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
Parameter
Min. Typ. Max. Units
50
–––
–––
0.057 –––
–––
––– 0.024
2.0
–––
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
120
–––
42
–––
96
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
=1mA
V
GS
=10V, I
D
= 32A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 32A
V
DS
= 50V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 54A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 54A
R
G
= 9.1
R
D
= 0.49
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
66
21
25
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1800 –––
960
160
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
50
220
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
S
D
G
相關PDF資料 |
PDF描述 |
|---|---|
| IRFZ48RL | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-262 |
| IRFZ48RS | 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
| IRFZ48S | |
| IRFZ48STRL | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-263AB |
| IRFZ48STRR | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-263AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFZ48LPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFZ48N | 功能描述:MOSFET MOSFET, 55V, 64A, 14 mOhm, 54 nC Qg, TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ48NL | 功能描述:MOSFET N-CH 55V 64A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFZ48NLPBF | 功能描述:MOSFET MOSFT 55V 64A 14mOhm 54nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ48NPBF | 功能描述:MOSFET MOSFT 55V 64A 14mOhm 54nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。