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參數資料
| 型號： | IRG4BC10SD-L |
| 廠商： | International Rectifier |
| 英文描述： | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.10V，@和VGE \u003d 15V的，集成電路\u003d 2.0安培） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 217K |
| 代理商： | IRG4BC10SD-L |
IRG4BC10SD-S
IRG4BC10SD-L
Standard Speed
CoPack IGBT
06/12/01
www.irf.com
1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Extremely low voltage drop 1.1Vtyp. @ 2A
S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
Very Tight Vce(on) distribution
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry standard D
2
Pak & TO-262 packages
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
=
1.10V
@V
GE
= 15V, I
C
= 2.0A
Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Lower losses than MOSFET's conduction and
Diode losses
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
14
8.0
18
18
4.0
18
± 20
38
15
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100
°
C
I
FM
V
GE
P
D
@ T
C
= 25
°
C
P
D
@ T
C
= 100
°
C
T
J
T
STG
A
V
-55 to +150
°
C
300 (0.063 in. (1.6mm) from case)
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
Max.
3.3
7.0
–––
80
40
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Wt
°
C/W
2.0(0.07)
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
D
2
Pak
IRG4BC10SD-S
TO-262
IRG4BC10SD-L
PD - 94255
相關PDF資料 |
PDF描述 |
|---|---|
| IRG4BC10KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A) |
| IRG4BC10UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A) |
| IRG4BC10SD-S | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| IRG4BC10SDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4BC10UDPBF | INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4BC10SD-LPBF | 功能描述:IGBT 晶體管 600V DC-1kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC10SDPBF | 功能描述:IGBT 晶體管 600V DC-1kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC10SD-S | 功能描述:DIODE IGBT 600V 14A D2PAK RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC10SD-SPBF | 功能描述:IGBT 晶體管 600V DC-1kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC10SD-STRL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB |
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