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參數資料
| 型號： | IRG4BC20MD-SPBF |
| 廠商： | International Rectifier |
| 英文描述： | 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 303K |
| 代理商： | IRG4BC20MD-SPBF |
IRG4BC20MD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Rugged: 10μsec short circuit capable at V
GS
=15V
Low V
CE(on)
for 4 to 10kHz applications
IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
Industry standard D
2
Pak package
Lead-Free
Benefits
Offers highest efficiency and short circuit
capability for intermediate applications
Provides best efficiency for the mid range frequency
(4 to 10kHz)
Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
For Low EMI designs- requires little or no snubbing
Single Package switch for bridge circuit applications
Compatible with high voltage Gate Driver IC's
Allows simpler gate drive
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.85V
@V
GE
= 15V, I
C
= 11A
Parameter
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
2.1
2.5
------
80
------
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
07/15/04
Absolute Maximum Ratings
Parameter
Max.
600
18
11
36
36
7.0
10
36
± 20
60
24
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
t
sc
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
A
μs
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
1
Short Circuit Rated
Fast IGBT
D
2
Pak
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4BC20MD-STRL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB |
| IRG4BC20MD-STRR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB |
| IRG4BC20S | 功能描述:IGBT STD 600V 19A TO-220AB RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC20SD | 功能描述:IGBT W/DIODE 600V 19A TO-220AB RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC20SDPBF | 功能描述:IGBT 晶體管 600V DC-1kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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