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參數資料
| 型號： | IRG4IBC20UD |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 230K |
| 代理商： | IRG4IBC20UD |
IRG4IBC20UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
2.5kV, 60s insulation voltage
4.8 mm creapage distance to heatsink
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
Tighter parameter distribution
Industry standard Isolated TO-220 Fullpak
TM
outline
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.85V
@V
GE
= 15V, I
C
= 6.5A
4/24/2000
PD -91752A
Parameter
Typ.
–––
–––
–––
2.0 (0.07)
Max.
3.7
5.1
65
–––
Units
R
θ
JC
R
θ
JC
R
θ
JA
Wt
www.irf.com
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
TO-220 FULLPAK
1
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
11.4
6.0
52
52
6.5
52
2500
± 20
34
14
Units
V
V
CES
I
C
@ T
C
= 25
°
C
I
C
@ T
C
= 100
°
C
I
CM
I
LM
I
F
@ T
C
= 100
°
C
I
FM
Visol
V
GE
P
D
@ T
C
= 25
°
C
P
D
@ T
C
= 100
°
C
T
J
T
STG
A
V
-55 to +150
°
C
300 (0.063 in. (1.6mm) from case)
10 lbf
in (1.1 N
m)
Absolute Maximum Ratings
W
Benefits
Simplified assembly
Highest efficiency and power density
HEXFRED
TM
antiparallel Diode minimizes
switching losses and EMI
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4IBC20UDPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4IBC20W | 功能描述:IGBT WARP 600V 11.8A TO-220FP RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4IBC20W_04 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4IBC20WPBF | 功能描述:IGBT 晶體管 600V Warp 60-150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4IBC30F | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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