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參數資料
| 型號： | IRG4MC40U |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 151K |
| 代理商： | IRG4MC40U |
IRG4MC40U
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
UltraFast Speed Operation 8kHz - 40kHz,
> 200kHz in Resonent Mode
High Operating Frequency
Switching-loss Rating includes all "tail" Losses
Ceramic Eyelets
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
V
CES
= 600V
V
CE(on) max
= 2.1V
@V
GE
= 15V, I
C
= 20A
Parameter
Max.
600
35*
20
140
140
± 20
125
50
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
A
V
W
-55 to + 150
°C
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
g
Absolute Maximum Ratings
02/08/02
www.irf.com
1
UltraFast Speed IGBT
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-254AA
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
°C/W
Test Conditions
1.1
PD -94305D
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