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參數資料
| 型號： | IRG4PC30 |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.59V，@和VGE \u003d 15V的，集成電路\u003d 17A條） |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 145K |
| 代理商： | IRG4PC30 |
Parameter
Max.
600
31
17
120
120
± 20
10
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
°C
E
C
G
n-channel
TO-247AC
Features
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
V
CES
= 600V
V
CE(on) typ.
=
1.59V
@V
GE
= 15V, I
C
= 17A
1229//00
Parameter
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°
C/W
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
1
相關PDF資料 |
PDF描述 |
|---|---|
| IRG4PC30F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
| IRG4PC30FD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
| IRG4PC30KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
| IRG4PC30UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) |
| IRG4PC40FDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4PC30F | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PC30FD | 制造商:International Rectifier 功能描述:SINGLE IGBT, 600V, 31A, Transistor Type:IGBT, DC Collector Current:31A, Collecto |
| IRG4PC30FD-E | 制造商:International Rectifier 功能描述:600V 31.000A COPAK 247 / IGBT : JA / DIS |
| IRG4PC30FDPBF | 功能描述:IGBT 晶體管 600V Fast 1-8kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PC30FPBF | 功能描述:IGBT 晶體管 600V Fast 1-8kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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