- 您現在的位置：買賣IC網 > PDF目錄377518 > IRG4RC10S (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) PDF資料下載
參數資料
| 型號： | IRG4RC10S |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.10V，@和VGE \u003d 15V的，集成電路\u003d 2.0安培） |
| 文件頁數： | 1/10頁 |
| 文件大小： | 190K |
| 代理商： | IRG4RC10S |
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
IRG4RC10KD
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10μs @ 125
°
C, V
GE
= 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-252AA package
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 2.39V
@V
GE
= 15V, I
C
= 5.0A
12/30/00
Benefits
Latest generation 4 IGBT's offer highest power density
motor controls possible
HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
For hints see design tip 97003
Absolute Maximum Ratings
W
D-PAK
TO-252AA
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Thermal Resistance
°
C/W
Parameter
Typ.
–––
–––
–––
0.3 (0.01)
Max.
3.3
7.0
50
–––
Units
R
θ
JC
R
θ
JC
R
θ
JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
g (oz)
PD 91736A
1
相關PDF資料 |
PDF描述 |
|---|---|
| IRG4RC10SD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) |
| IRG4RC10UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A) |
| IRG4RC10KDTR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA |
| IRG4RC10KDTRL | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA |
| IRG4RC10KDTRR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4RC10SD | 功能描述:IGBT STD W/DIODE 600V 8.0A D-PAK RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4RC10SDPBF | 功能描述:IGBT 晶體管 600V DC-1 KHZ (STD) COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4RC10SDTR | 制造商:International Rectifier 功能描述:IGBT Transistor, N-CHAN, TO-252AA |
| IRG4RC10SDTRLP | 功能描述:IGBT UFAST 600V 14A COPACK DPAK RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4RC10SDTRPBF | 功能描述:IGBT 晶體管 600V DC-1kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。