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參數資料
| 型號： | IRGB4055PBF |
| 廠商： | International Rectifier |
| 英文描述： | Advanced Trench IGBT Technology |
| 中文描述： | 先進的溝道IGBT技術 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 629K |
| 代理商： | IRGB4055PBF |
www.irf.com
1
10/13/05
IRGB4055PbF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low V
CE(on)
and Energy per Pulse (E
PULSETM
)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
E
C
G
n-channel
Absolute Maximum Ratings
Parameter
Units
V
A
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
W
W/°C
°C
T
J
T
STG
N
Thermal Resistance
Parameter
Typ.
–––
Max.
0.49
Units
°C/W
R
θ
JC
Junction-to-Case
270
255
102
2.04
300
-40 to + 150
10lb in (1.1N m)
Max.
±30
60
110
V
CE
min
V
CE(ON)
typ. @ 110A
I
RP
max @ T
C
= 25°C
T
J
max
300
1.70
270
150
V
V
A
°C
Key Parameters
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRGB4056DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB4059DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB4060DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB4061DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB4062DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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