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參數資料
| 型號： | IRGB4055PbF |
| 廠商： | International Rectifier |
| 英文描述： | PDP TRENCH 1GBT |
| 中文描述： | 等離子戴1GBT |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 711K |
| 代理商： | IRGB4055PBF |
www.irf.com
1
03/16/07
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low V
CE(on)
and Energy per Pulse (E
PULSETM
)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
V
CE
min
V
CE(ON)
typ. @ 110A
I
RP
max @ T
C
= 25°C
T
J
max
300
1.70
270
150
V
V
A
°C
Key Parameters
IRGB4055PbF
IRGS4055PbF
E
C
G
n-channel
G
C
E
Gate
Collector
Emitter
D
2
Pak
IRGS4055DPbF
E
C
G
C
TO-220
IRGB4055DPbF
C
E
C
G
Absolute Maximum Ratings
Parameter
Units
V
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
W/°C
T
J
T
STG
N
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
2
Pak
A
°C/W
W
°C
270
255
102
2.04
300
-40 to + 150
10lb in (1.1N m)
Max.
±30
60
110
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