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參數(shù)資料
| 型號(hào)： | IRGB4B60KD1PBF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 446K |
| 代理商： | IRGB4B60KD1PBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
TO-220 is available in PbF as Lead-Free
8/10/04
www.irf.com
1
IRGB4B60KD1PbF
IRGS4B60KD1
IRGSL4B60KD1
E
G
n-channel
C
V
CES
= 600V
I
C
= 7.6A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 2.1V
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
D
2
Pak
IRGS4B60KD1
TO-262
IRGSL4B60KD1
TO-220
IRGB4B60KD1PbF
Absolute Maximum Ratings
Parameter
Max.
600
11
7.6
22
22
11
6.7
22
±20
63
31
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
A
V
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
Parameter
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
2.4
6.1
–––
62
40
–––
Units
°C/W
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Weight
g
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參數(shù)描述 |
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| IRGB4B60KPBF | 功能描述:IGBT 晶體管 600V Low VCEon RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB5B120KD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGB5B120KDPBF | 功能描述:IGBT 晶體管 1200V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB6B60K | 制造商:International Rectifier 功能描述:IGBT TO-220AB |
| IRGB6B60KD | 制造商:International Rectifier 功能描述:SINGLE IGBT, 600V, 13A, Transistor Type:IGBT, DC Collector Current:13A, Collecto |
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