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參數資料
| 型號： | IRGBC20KD2-S |
| 文件頁數： | 1/1頁 |
| 文件大小： | 85K |
| 代理商： | IRGBC20KD2-S |
C-100
Same type
D.U.T.
430μF
80%
Fig. 18a
-
Test Circuit for Measurement of
I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
, I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
IRGBC20FD2
t1
Ic
Vce
t1
t2
90% Ic
10% Vce
td(off)
tf
Ic
5% Ic
t1+5μS
Vce ic dt
∫
90% Vge
+Vge
Eoff =
Fig. 18b
-
Test Waveforms for Circuit of Fig. 18a, Defining
E
off
, t
d(off)
, t
f
∫
t1
Vce ie dt
t2
5% Vce
Ic
Ipk
Vcc
10% Ic
Vce
t1
t2
DUT VOLTAGE
AND CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIODE REVERSE
RECOVERY ENERGY
tx
10% Vcc
Eon =
∫
t3
Erec =
t4
Vd id dt
t4
t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
Irr
10% Irr
Vcc
trr
∫
tx
Qrr =
trr
id dt
Fig. 18c
-
Test Waveforms for Circuit of Fig. 18a,
Defining E
on
, t
d(on)
, t
r
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18d
-
Test Waveforms for Circuit of Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 1
- JEDEC Outline TO-220AB
Section D - page D-12
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| IRGBC26 | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 19A I(C) | TO-220AB |
| IRGBC30FD1 | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 31A I(C) | TO-220AB |
| IRGBC30KD2 | |
| IRGBC30KD2-S | |
| IRGBC36 | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 34A I(C) | TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRGBC20K-S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A) |
| IRGBC20M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGBC20MD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A) |
| IRGBC20MD2-S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A) |
| IRGBC20M-S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A) |
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