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參數資料
| 型號： | IRGC100B120KB |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP |
| 中文描述： | 晶體管| IGBT的|正陳| 1.2KV五（巴西）國際消費電子展|芯片 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 18K |
| 代理商： | IRGC100B120KB |
IRGC100B120KB
www.irf.com
2/14/2000
Die in Wafer Form
Mechanical Data
Electrical Characteristics (Wafer Form)
Description
Guaranteed (min, max)
V
CE (on)
Collector-to-Emitter Saturation Voltage
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
GE(th)
Gate Threshold Voltage
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Die Outline
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4μm)
0.488" x 0.488"
150mm, with std. < 100 > flat
185μm, +/-15μm
01-5318
100μm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Recommended Die Attach Conditions
Parameter
Test Conditions
1.12V min, 1.29V max
1200V min
4.4V min, 6.0V max
40μA max
± 3 μA max
I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 1mA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
= 1mA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-20V
E
C
G
1200V
I
C(nom)
= 100A
V
CE(on) typ.
= 2.2V @
I
C(nom)
@ 25°C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
Features
GEN5 Non Punch Through (NPT) Technology
Low V
CE(on)
10
μ
s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
Benefits
Benchmark Efficiency for Motor Control Applications
Rugged Transient Performance
Excellent Current Sharing in Parallel Operation
LENGTH
> [.0250] TOLERANCE = + /- [.0010]
> [.050] TOLERANCE = + /- [.008]
> 1.270 TOLERANCE = + /- 0.203
< [.050] TOLERANCE = + /- [.004]
< 1.270 TOLERANCE = + /- 0.102
OVERALL DIE:
WIDTH
&
LENGTH
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
SK = SOURCE KELVIN
IS = CURRENTSENSE
< 0.635 TOLERANCE = + /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE = + /- 0.025
4. DIMENSIONAL TOLERANCES:
BONDING PADS:
WIDTH
G = GATE
S = SOURCE
&
3. LETTER DESIGNATION:
NOTES:
E = EMITTER
01-5318
10.921
[.430]
1.065
[.042]
1.096
[.043]
G
12.396
[.488]
11.004
[.433]
EMITTER
PD - 93874
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