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參數(shù)資料
| 型號(hào)： | IRGC8B120UB |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP |
| 中文描述： | 晶體管| IGBT的|正陳| 1.2KV五（巴西）國(guó)際消費(fèi)電子展|芯片 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 15K |
| 代理商： | IRGC8B120UB |
IRGC8B120UB
PD -94317
IRGC8B120UB IGBT Die in Wafer Form
Features
GEN5 Non Punch Through (NPT) Technology
UltraFast
10μs Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
Benefits
Benchmark Efficiency above 20KHz
Optimized for Welding, UPS, and Induction Heating
Rugged with UltraFast Performance
Excellent Current Sharing in Parallel Operation
Qualified for Industrial Market
10/02/01
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Al-Ti-NiV-Ag ( 1kA-1kA-4kA-6kA )
99% Al, 1% Si (4 microns)
0.133" x 0.195"
150mm, with std. < 100 > flat
185 +/- 15 Microns
01-5427
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Recommended Die Attach Conditions
Mechanical Data
Die Outline
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Guaranteed (Min/Max)
2.77V Min., 3.82V Max.
1200V Min.
4.4V Min., 6.0V Max.
5.0 μA Max.
±
1.1 μA Max.
Test Conditions
I
C
= 5.0A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 100μA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
=125μA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-
20V
Collector-to-Emitter Saturation Voltage
Collector-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Electrical Characteristics ( Wafer Form )
E
C
G
0.696
[.027]
EMITTER
G
4.953
[.195]
1.953
[.077]
0.701
[.027]
3.378
[.133]
3.473
[.136]
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
4. DIMENSIONAL TOLERANCES:
3. LETTER DESIGNATION:
S = SOURCE
NOTES:
WIDTH
&
LENGTH
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
> [.0250] TOLERANCE = + /- [.0010]
> 0.635 TOLERANCE = + /- 0.025
< [.0250] TOLERANCE = + /- [.0005]
< 0.635 TOLERANCE = + /- 0.013
< 1.270 TOLERANCE = + /- 0.102
&
LENGTH
OVERALL DIE:
WIDTH
BONDING PADS:
SK = SOURCE KELVIN
IS = CURRENTSENSE
G = GATE
E = EMITTER
1200 V
I
C(nom)
= 8A
VCE(on) typ. = 3.63V
@
I
C(nom)
@ 25
°
C
UltraFast IGBT
Short Circuit Rated
150mm Wafer
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