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參數資料
| 型號： | IRGP4050 |
| 廠商： | International Rectifier |
| 英文描述： | PDP Switch |
| 中文描述： | 等離子開關 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 282K |
| 代理商： | IRGP4050 |
IRGP4050
PDP Switch
E
C
G
n-channel
=
1
www.irf.com
PD-95882
Features
Key parameters optimized for PDP sustain &
Energy recovery applications
104A continuous collector current
rating reduces component count
High pulse current rating makes it ideal for
capacitive load circuits
Low temperature co-efficient of V
CE (ON)
ensures
reduced power dissipation at operating junction
temperatures
Reverse voltage avalanche rating improves the
robustness in sustain driver application
Short fall & rise times for fast switching
This IGBT is specifically designed for sustain & energy recovery application
in plasma display panels. This IGBT features low V
CE (ON)
and fast switching
times to improve circuit efficiency and reliability. Low temperature co-efficient
of V
CE (ON)
makes this IGBT an ideal device for PDP sustain driver application.
TO-247AC
*Package limited to 60A.
Absolute Maximum Ratings
Parameter
Max.
250
104*
56
208
290
±20
1240
330
130
Units
V
A
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Solder Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.38
–––
40
–––
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
g (oz.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRGP4050PBF | 功能描述:IGBT 晶體管 250V Plasma Display Panel IGBT Switch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGP4055DPBF | 功能描述:IGBT PDP N-CH 300V TO-247AC RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRGP4055PBF | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 300V 110A 3PIN TO-247AC - Bulk |
| IRGP4062D-EPBF | 功能描述:IGBT 晶體管 600V UltraFast IGBT 5uS 24A 1.65 VCE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGP4062DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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