- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360955 > IRGP450LC PDF資料下載
參數(shù)資料
| 型號(hào)： | IRGP450LC |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 159K |
| 代理商： | IRGP450LC |
IRFP450LC
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
T
J
= 25°C, I
F
= 14A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
580
5.1
1.4
870
7.7
V
ns
μC
V
DD
= 25V, starting T
J
= 25°C, L = 7.0mH
R
G
= 25
, I
AS
= 14A. (See Figure 12)
I
SD
≤
14A, di/dt
≤
130A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
500
–––
–––
0.59
–––
–––
2.0
–––
8.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
49
–––
30
–––
30
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.4A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 8.4A
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 14A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 14A
R
G
= 6.2
R
D
= 17
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.40
4.0
–––
25
250
100
-100
74
19
35
–––
–––
–––
–––
V
V/°C
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2200
320
28
–––
–––
–––
pF
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
–––
56
–––
–––
14
A
nH
L
D
Internal Drain Inductance
–––
5.0
–––
L
S
Internal Source Inductance
–––
13
–––
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
μA
nA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGP460LC | |
| IRFP450LC | 500V,14A,N-Channel HEXFET Power MOSFET(500V,14A,N溝道 HEXFET功率MOS場(chǎng)效應(yīng)管) |
| IRGPC30KD2 | |
| IRGPC40K | |
| IRGPC40KD2 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGP450U | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGP450UD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGP460LC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| IRGP4640D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INSULATED GATEBIPOLARTRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGP4640D-EPBF | 功能描述:IGBT 晶體管 600V UltraFast IGBT 40A 250W 75nC RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。