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參數(shù)資料
| 型號： | IRGP50B60PD1PBF |
| 廠商： | International Rectifier |
| 英文描述： | WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | WARP2系列IGBT與超快軟恢復(fù)二極管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 406K |
| 代理商： | IRGP50B60PD1PBF |
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP50B60PD1PbF
6/2/04
Features
NPT Technology, Positive Temperature Coefficient
Lower V
CE
(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
E
G
n-channel
C
V
CES
= 600V
V
CE(on)
typ. = 2.00V
@ V
GE
= 15V
I
C
= 33A
Equivalent MOSFET
Parameters
R
CE(on)
typ. = 61m
I
D
(FET equivalent) = 50A
Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead-Free
TO-247AC
G
C
E
SMPS IGBT
Absolute Maximum Ratings
Parameter
Max.
600
75
45
150
150
40
15
60
±20
390
156
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FRM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
A
V
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0 (0.21)
Max.
0.32
1.7
–––
40
–––
Units
°C/W
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
g (oz)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGP50B60PDPBF | 功能描述:IGBT 晶體管 600V Warp2 150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGP8B120UD | 制造商:International Rectifier 功能描述:IGBT TRANSISTOR |
| IRGPC20F | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) |
| IRGPC20K | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC20KD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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